{"title":"聚焦离子束纳米图技术在半导体中的增强长宽比","authors":"A. Hayat, A. Lahav, M. Orenstein","doi":"10.1109/CLEO.2007.4452886","DOIUrl":null,"url":null,"abstract":"We demonstrate a more than 10 aspect-ratio FIB semiconductor nanopatterning technique. The undesired semiconductor material decomposition by the beam-tail ions is prevented by a protective Ti layer acting as a mask for the semiconductor.","PeriodicalId":193475,"journal":{"name":"2007 Conference on Lasers and Electro-Optics (CLEO)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced Aspect Ratio of Focused Ion Beam Nanopatterning Technique in Semiconductors\",\"authors\":\"A. Hayat, A. Lahav, M. Orenstein\",\"doi\":\"10.1109/CLEO.2007.4452886\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate a more than 10 aspect-ratio FIB semiconductor nanopatterning technique. The undesired semiconductor material decomposition by the beam-tail ions is prevented by a protective Ti layer acting as a mask for the semiconductor.\",\"PeriodicalId\":193475,\"journal\":{\"name\":\"2007 Conference on Lasers and Electro-Optics (CLEO)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Conference on Lasers and Electro-Optics (CLEO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CLEO.2007.4452886\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Conference on Lasers and Electro-Optics (CLEO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEO.2007.4452886","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enhanced Aspect Ratio of Focused Ion Beam Nanopatterning Technique in Semiconductors
We demonstrate a more than 10 aspect-ratio FIB semiconductor nanopatterning technique. The undesired semiconductor material decomposition by the beam-tail ions is prevented by a protective Ti layer acting as a mask for the semiconductor.
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