双栅FinFET的低温工作及模拟电路的演示

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404376

S. O'Uchi, K. Endo, M. Maezawa, T. Nakagawa, H. Ota, Y. Liu, T. Matsukawa, Y. Ishikawa, J. Tsukada, H. Yamauchi, W. Mizubayashi, S. Migita, Y. Morita, T. Sekigawa, H. Koike, K. Sakamoto, M. Masahara

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引用次数: 2

摘要

在实验和仿真的基础上，讨论了双栅FinFET在低温环境下的性能。结果表明，DG FinFET对低温环境下的扭结效应具有良好的免疫性能。我们基于物理的紧凑模型再现了测量到的I-V特性。本文还介绍了在4.2 K下由DG finfet组成的opamp的成功演示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Cryogenic operation of double-gate FinFET and demonstration of analog circuit at 4.2K

Performance of a double-gate (DG) FinFET in the cryogenic environment is discussed based on measurements and simulation. It was found that the DG FinFET has an excellent immunity to the kink effect in the cryogenic environment. Our physics-based compact model reproduced the measured I-V characteristics. The successful demonstration of an opamp consisting of the DG FinFETs at 4.2 K is also presented.

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2012 IEEE International SOI Conference (SOI)

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