一种高速编织的只读存储器

H. Maeda, M. Takashima, A. Kolk
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引用次数: 4

摘要

编织,镀线存储器的概念已被证明为高速DRO和NDRO存储器阵列的建设提供了一种经济的制造技术。编织存储器的经济性源于两个因素:首先,存储器元件由镀有坡莫合金的合金铜线组成,这种铜线是通过廉价、易于控制的连续电镀工艺制成的;其次,编织技术构成了提供阵列布线的高度自动化的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A high-speed, woven read-only memory
The woven, plated-wire memory concept has been shown to provide an economical fabrication technique for the construction of high-speed DRO and NDRO memory arrays. The economies of the woven memory arise from two factors: first, the memory element consists of permalloy-plated, alloy copper wire which is made by an inexpensive, readily controllable, continuous plating process; and second, the weaving technique constitutes a highly automated method for providing the array wiring.
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