片上硅通孔配电网三维快速仿真的无条件稳定显式方法

T. Sekine, H. Asai
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引用次数: 4

摘要

片上配电网(PDN)的等效电路由于等电位导体之间的过孔和电源线与地线之间的垂直耦合而具有精细的三维网格结构。此外,通过硅通孔与电感和电容寄生元件建模,并附加到PDN。因此,与三维集成电路技术相关的电路往往是一个紧密耦合的大网络。对于此类网络的仿真,显式时间推进方案在计算成本上优于传统的通用电路模拟器(如SPICE)。然而,显式方法有严格的数值稳定性条件,可能会限制最大时间步长,增加总成本。在这项工作中,我们提出了一种显式的,但不需要稳定条件的稳定方法。此外,本文所提出的无条件稳定显式方法与降阶技术相结合,提高了计算速度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Unconditionally stable explicit method for the fast 3-D simulation of on-chip power distribution network with through silicon via
The equivalent circuit of an on-chip power distribution network (PDN) has a fine 3-D grid structure due to the vias between equipotential conductors, and the vertical couplings between power and ground lines. In addition, a through silicon via is modeled with inductive and capacitive parasitic elements and appended to the PDN. Therefore, the circuit related to the 3-D IC technology tends to be a tightly coupled large network. For the simulation of this type of network, an explicit time marching scheme has an advantage over conventional general-purpose circuit simulators such as SPICE in the computational cost. However, the explicit method has a strict numerical stability condition, which may limit the maximum time step size and increase the total amount of the cost. In this work, we propose the method which is explicit, but stable with no stability condition. Additionally, the proposed unconditionally-stable explicit method is accelerated more by combining with an order reduction technique.
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