先进的芯片中间商与微碰撞双重性

O. Vikinski, A. Waizman
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引用次数: 0

摘要

硅技术和芯片设计的限制是瓷砖架构发展的主要驱动力。在瓦片架构中,封装的硅被分解成更小的瓦片,组装在芯片中间层上,使每个瓦片使用不同的工艺节点。本文介绍了一种先进的2.5D芯片介面器,它可以使用双微碰撞连接实现分解。小几何,细间距微凸点,用于芯片间信号互连。规则的几何形状,规则的螺距微凸点,用于外部信号连接和电力输送。大多数规则螺距的微凸点,采用直通垂直路径连接到包凸点。在需要的基础上,芯片中间层芯片用于重新分配路由到封装凸点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced Chip Interposer with Micro-Bump Duality
Silicon technology and chip design constraints are the main drivers to tile architecture development. In tile architecture, packaged silicon is disaggregated into smaller tiles assembled on a chip interposer, enabling usage of different process node for each tile. This paper describes an advanced 2.5D chip interposer that enables disaggregation using dual micro-bump connectivity. Small geometry, fine pitch micro-bumps, used for die-to-die signals interconnect through the chip interposer. Regular geometry, regular pitch micro-bumps, used for external signals connectivity and power delivery. Majority of regular pitch micro-bumps, use straight through vertical path connection to the package bumps. On a need basis, chip interposer die is used for redistribution routing to package bumps.
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