单轴拉伸应变下Si纳米线mosfet散射限制输运特性的直径依赖性

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI:10.1109/SISPAD.2014.6931605

Takahisa Tanaka, K. Itoh

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引用次数: 0

摘要

研究了直径对单轴应变硅纳米线mosfet漏极电流的影响。基于多子带玻尔兹曼输运方程的确定性解，考虑通道内声子散射、谷间声子散射和界面粗糙度散射，计算漏极电流。我们发现3nm直径[110]取向的Si NW mosfet在1%的单轴拉伸应变下，漏极电流增强了~2X。

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Diameter dependence of scattering limited transport properties of Si nanowire MOSFETs under uniaxial tensile strain

Effects of the diameter on the drain current of uniaxially strained Si nanowire (NW) MOSFETs are investigated. Based on the deterministic solution of the multi-subband Boltzmann transport equation, the drain current is calculated considering the intravalley acoustic phonon scatterings, intervalley phonon scatterings and interface roughness scatterings. We found 3 nm diameter [110] oriented Si NW MOSFETs shows ~2X drain current enhancement by the 1% uniaxial tensile strain.

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2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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