{"title":"微波晶体管噪声和增益参数的计算机辅助同时测定","authors":"M. Sannino","doi":"10.1109/EUMA.1979.332661","DOIUrl":null,"url":null,"abstract":"A new method for the determination of noise and gain parameters of microwave linear two-ports (transistors) is presented. The method allows the simultaneous determination of the two parameter sets through a proper computer-aided procedure which processes the experimental data obtained from a measuring system employing noise meters and generators only. Experimental verifications carried-out on a microwave low noise transistor in S-band are reported.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Computer-Aided Simultaneous Determination of Noise and Gain Parameters of Microwave Transistors\",\"authors\":\"M. Sannino\",\"doi\":\"10.1109/EUMA.1979.332661\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new method for the determination of noise and gain parameters of microwave linear two-ports (transistors) is presented. The method allows the simultaneous determination of the two parameter sets through a proper computer-aided procedure which processes the experimental data obtained from a measuring system employing noise meters and generators only. Experimental verifications carried-out on a microwave low noise transistor in S-band are reported.\",\"PeriodicalId\":128931,\"journal\":{\"name\":\"1979 9th European Microwave Conference\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1979 9th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1979.332661\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1979 9th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1979.332661","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Computer-Aided Simultaneous Determination of Noise and Gain Parameters of Microwave Transistors
A new method for the determination of noise and gain parameters of microwave linear two-ports (transistors) is presented. The method allows the simultaneous determination of the two parameter sets through a proper computer-aided procedure which processes the experimental data obtained from a measuring system employing noise meters and generators only. Experimental verifications carried-out on a microwave low noise transistor in S-band are reported.