采用SiGe技术的245ghz CB LNA和SHM混频器

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2012-03-01 DOI:10.1109/SIRF.2012.6160120

Y. Mao, K. Schmalz, J. Borngraber, J. Scheytt

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引用次数: 9

摘要

本文提出了一种采用ft/fmax=280/425 GHz SiGe技术的四级245 GHz LNA和一种采用ft/fmax=250/300 GHz SiGe技术的四次谐波245 GHz跨导混频器。LNA利用每级共基(CB)拓扑，在245ghz时具有12db增益，同时显示26ghz的3db带宽。电源电压为2V，功耗为28mw。跨导混频器在245 GHz时具有-7 dB转换增益，在61 GHz时具有8 dBm的LO功率。混合器在3V时吸9.8 mA。给出了由CB LNA和SHM混频器组成的接收机的仿真结果。

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A 245 GHz CB LNA and SHM mixer in SiGe technology

The paper presents a four stage 245 GHz LNA in an ft/fmax=280/425 GHz SiGe technology and a 4th sub harmonic 245 GHz transconductance mixer in an ft/fmax=250/300 GHz SiGe technology. The LNA takes advantage of common base (CB) topology for each stage and has 12 dB gain at 245 GHz, while exhibiting a 3 dB bandwidth of 26 GHz. It has a supply voltage of 2V and power dissipation of 28 mW. The transconductance mixer has -7 dB conversion gain at 245 GHz with an LO power of 8 dBm at 61 GHz. The mixer draws 9.8 mA at 3V. Simulation results of the receiver comprising the CB LNA and SHM mixer are given.

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2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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