用于NVM或图像传感器的新型NCBO陷阱层电荷陷阱器件

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346950

K. Joo, Changrok Moon, Sungnam Lee, Xiofeng Wang, J. Yang, I. Yeo, Duckhyung Lee, O. Nam, U. Chung, J. Moon, B. Ryu

{"title":"用于NVM或图像传感器的新型NCBO陷阱层电荷陷阱器件","authors":"K. Joo, Changrok Moon, Sungnam Lee, Xiofeng Wang, J. Yang, I. Yeo, Duckhyung Lee, O. Nam, U. Chung, J. Moon, B. Ryu","doi":"10.1109/IEDM.2006.346950","DOIUrl":null,"url":null,"abstract":"ZnO or AlxGa1-xN charge trap device showed large memory window (>7V) with fast P/E speed (plusmn17 V, 100 (_is) and excellent retention (10-year memory window of 6 V with small charge loss rate; ~l/5 of that of Si3N4). GaN and ZnO trap devices also showed the photo-sensitive programming due to their optoelectronics properties, providing the possibility of developing new type of high performance image sensor (QE ~ 80%)","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"Novel Charge Trap Devices with NCBO Trap Layers for NVM or Image Sensor\",\"authors\":\"K. Joo, Changrok Moon, Sungnam Lee, Xiofeng Wang, J. Yang, I. Yeo, Duckhyung Lee, O. Nam, U. Chung, J. Moon, B. Ryu\",\"doi\":\"10.1109/IEDM.2006.346950\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"ZnO or AlxGa1-xN charge trap device showed large memory window (>7V) with fast P/E speed (plusmn17 V, 100 (_is) and excellent retention (10-year memory window of 6 V with small charge loss rate; ~l/5 of that of Si3N4). GaN and ZnO trap devices also showed the photo-sensitive programming due to their optoelectronics properties, providing the possibility of developing new type of high performance image sensor (QE ~ 80%)\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346950\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346950","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 20

摘要

ZnO或AlxGa1-xN电荷阱器件具有大的记忆窗口(bbb7v)和快的P/E速度(plusmn17 V, 100 (_is))和良好的保留(10年记忆窗口为6 V，电荷损失率小);~ Si3N4的1 /5)。GaN和ZnO阱器件由于其光电子特性也表现出光敏编程，为开发新型高性能图像传感器(QE ~ 80%)提供了可能。

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Novel Charge Trap Devices with NCBO Trap Layers for NVM or Image Sensor

ZnO or AlxGa1-xN charge trap device showed large memory window (>7V) with fast P/E speed (plusmn17 V, 100 (_is) and excellent retention (10-year memory window of 6 V with small charge loss rate; ~l/5 of that of Si3N4). GaN and ZnO trap devices also showed the photo-sensitive programming due to their optoelectronics properties, providing the possibility of developing new type of high performance image sensor (QE ~ 80%)

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2006 International Electron Devices Meeting

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