正交形状/本征各向异性开关- mram

S. Wang, H. Fujiwara
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引用次数: 3

摘要

研究了双分子层系统对外加磁场的磁化响应的一般特征,以便更好地理解开关的机制。利用Stoner-Wohlfarth模型对合成反铁磁体的磁化响应进行了详细分析,指出在不加场的情况下,将形状各向异性与本征诱导各向异性正交,使稳定反平行结构的方向与本征各向异性平行,可以大大减小工作场。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Orthogonal shape/intrinsic anisotropy toggle-MRAM
The general features of magnetisation response of bilayer systems to an applied field is investigated to facilitate better understanding of the mechanism of the toggle-switching. Based on the detailed analysis of the response of the magnetisations of the SAF (synthetic antiferromagnet) using Stoner-Wohlfarth model, it is reported that the operating field can be substantially reduced by setting the shape anisotropy orthogonal to the intrinsic induced anisotropy, keeping the direction of the stable anti-parallel configuration parallel to the intrinsic anisotropy when no field is applied.
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