GaAs:Er - era量子点1550nm驱动光导开关的太赫兹性能

2017 IEEE National Aerospace and Electronics Conference (NAECON) Pub Date : 2017-06-01 DOI:10.1109/NAECON.2017.8268796

A. Mingardi, W.-D. Zhang, E. Brown

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引用次数: 1

摘要

在GaAs:Er中超快的1550nm外部光导电性使得制造具有与基于传统780 nm内在光导电性的GaAs:Er器件相当性能的太赫兹光导器件成为可能。本文讨论了铒掺杂浓度及其相关的ErAs量子点形成对太赫兹器件性能的影响，重点是光导开关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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THz performance of 1550-nm-driven photoconductive switches made from GaAs:Er with ErAs quantum dots

Ultrafast 1550-nm extrinsic photoconductivity in GaAs:Er makes it possible to fabricate THz photoconductive devices having performance comparable to GaAs:Er devices based on traditional 780-nm intrinsic photoconductivity. This paper addresses the effect of Er doping concentration and its associated ErAs quantum-dot formation on THz device performance, focusing on photoconductive switches.

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2017 IEEE National Aerospace and Electronics Conference (NAECON)

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