Exploration of Clipped Barrier Silicon Carbide Schottky Diode

In order to make silicon carbide, a new material, to play a better role in the field of power electronic device to facilitate people's production and life, this study designed a new structure power diode - clipped barrier silicon carbide Schottky diode. It is compared with a common Schottky barrier diode and verified by simulation to verify its feasibility. The research results show that the new diode designed in this study has obvious advantages and irreplaceability, which can solve some performance problems existing in common diodes. It can be seen that the design of the clipped barrier silicon carbide Schottky diode is feasible and is expected to be widely and generally used in future development.