{"title":"硅微带探测器中辐射诱发的表面泄漏电流","authors":"A. Foland, J. Alexander","doi":"10.1109/NSSMIC.1995.510365","DOIUrl":null,"url":null,"abstract":"After exposure to X-rays and UV light, we have observed induced leakage currents in silicon microstrip detectors designed for CLEO III. UV measurements have shown that the damage is confined to the Si-SiO/sub 2/ interfacial area. The damage is manifested only as a leakage current without additional 1/f noise or significant changes to detector parameters. The scaled damage rate is measured to be 5/spl plusmn/1 nA/cm/sup 2//kRad for 20 keV X-rays.","PeriodicalId":409998,"journal":{"name":"1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Radiation-induced surface leakage currents in silicon microstrip detectors\",\"authors\":\"A. Foland, J. Alexander\",\"doi\":\"10.1109/NSSMIC.1995.510365\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"After exposure to X-rays and UV light, we have observed induced leakage currents in silicon microstrip detectors designed for CLEO III. UV measurements have shown that the damage is confined to the Si-SiO/sub 2/ interfacial area. The damage is manifested only as a leakage current without additional 1/f noise or significant changes to detector parameters. The scaled damage rate is measured to be 5/spl plusmn/1 nA/cm/sup 2//kRad for 20 keV X-rays.\",\"PeriodicalId\":409998,\"journal\":{\"name\":\"1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSSMIC.1995.510365\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSSMIC.1995.510365","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Radiation-induced surface leakage currents in silicon microstrip detectors
After exposure to X-rays and UV light, we have observed induced leakage currents in silicon microstrip detectors designed for CLEO III. UV measurements have shown that the damage is confined to the Si-SiO/sub 2/ interfacial area. The damage is manifested only as a leakage current without additional 1/f noise or significant changes to detector parameters. The scaled damage rate is measured to be 5/spl plusmn/1 nA/cm/sup 2//kRad for 20 keV X-rays.
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