{"title":"高压晶闸管的光敏结构","authors":"P. Bruyne, R. Sittig","doi":"10.1109/PESC.1976.7072926","DOIUrl":null,"url":null,"abstract":"A new structure for a light sensitive area is investigated which should be used for direct light activation of high power thyristors. This structure enables thyristors to be constructed which require only moderate light intensity for triggering while still exhibiting a high dv/dt capability. Test samples were produced showing a forward blocking voltage of 4.5 kV. They can withstand a rate of voltage rise of more than 3000 Vμs even at a temperature of 125°C. Using a GaAs-LED they can be triggered with an incident radiant power of about 15 mW.","PeriodicalId":208049,"journal":{"name":"1970 IEEE Power Electronics Specialists Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Light sensitive structure for high voltage thyristors\",\"authors\":\"P. Bruyne, R. Sittig\",\"doi\":\"10.1109/PESC.1976.7072926\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new structure for a light sensitive area is investigated which should be used for direct light activation of high power thyristors. This structure enables thyristors to be constructed which require only moderate light intensity for triggering while still exhibiting a high dv/dt capability. Test samples were produced showing a forward blocking voltage of 4.5 kV. They can withstand a rate of voltage rise of more than 3000 Vμs even at a temperature of 125°C. Using a GaAs-LED they can be triggered with an incident radiant power of about 15 mW.\",\"PeriodicalId\":208049,\"journal\":{\"name\":\"1970 IEEE Power Electronics Specialists Conference\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1976-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1970 IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1976.7072926\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1970 IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1976.7072926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Light sensitive structure for high voltage thyristors
A new structure for a light sensitive area is investigated which should be used for direct light activation of high power thyristors. This structure enables thyristors to be constructed which require only moderate light intensity for triggering while still exhibiting a high dv/dt capability. Test samples were produced showing a forward blocking voltage of 4.5 kV. They can withstand a rate of voltage rise of more than 3000 Vμs even at a temperature of 125°C. Using a GaAs-LED they can be triggered with an incident radiant power of about 15 mW.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
