基于场极板端接的准垂直GaN高功率肖特基二极管设计

CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI:10.1109/SMICND.2010.5650593

V. Sundaramoorthy, I. Nistor

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引用次数: 2

摘要

本文介绍了一种用于大功率电子器件的准垂直型氮化镓功率肖特基二极管的优化设计。采用斜氧化场板作为结端技术，提高了反向偏压击穿电压。结果表明，当坡口宽度为18um，氧化物厚度为1.5 um时，最大击穿电压为1995 V。该二极管的导态电阻为14mΩcm2，具有274 MW/cm2的高功率值。

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Design of quasi-vertical GaN high power Schottky diodes based on field plate termination

In this paper, the numerical design of a optimized quasi-vertical gallium nitride power Schottky diode for high power electronic applications is illustrated. Bevel oxide field plate was employed as a junction termination technique to enhance the breakdown voltage in reverse bias. It was found that a maximum breakdown voltage of 1995 V was obtained for a bevel width of 18 um and oxide thickness of 1.5 um. This diode with on-state resistance of 14mΩcm2 has a high power figure of merit of 274 MW/cm2.

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CAS 2010 Proceedings (International Semiconductor Conference)

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