{"title":"一个带电流开关和神经元MOS下行电路的4位CMOS四元模拟转换器","authors":"S. Han, Young-Hee Choi, Heung See Kim","doi":"10.1109/ISMVL.2001.924556","DOIUrl":null,"url":null,"abstract":"This paper describes a 3.3 V low power 4 digit CMOS quaternary to analog converter (QAC) designed with a neuron MOS down literal circuit block and cascode current mirror source block. The neuron MOS down literal architecture allows the designed QAC to accept not only 4 level voltage inputs, but also a high speed sampling rate quaternary voltage source at LSB. Fast settling time and low power consumption of the QAC are achieved by utilizing the proposed architecture. The simulation results of the designed 4 digit QAC show a sampling rate of 6 MHz and a power dissipation of 1 mW with a single power supply of 3.3 V for a double poly four metal standard CMOS 0.35 /spl square/ n-well technology.","PeriodicalId":297353,"journal":{"name":"Proceedings 31st IEEE International Symposium on Multiple-Valued Logic","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 4 digit CMOS quaternary to analog converter with current switch and neuron MOS down-literal circuit\",\"authors\":\"S. Han, Young-Hee Choi, Heung See Kim\",\"doi\":\"10.1109/ISMVL.2001.924556\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a 3.3 V low power 4 digit CMOS quaternary to analog converter (QAC) designed with a neuron MOS down literal circuit block and cascode current mirror source block. The neuron MOS down literal architecture allows the designed QAC to accept not only 4 level voltage inputs, but also a high speed sampling rate quaternary voltage source at LSB. Fast settling time and low power consumption of the QAC are achieved by utilizing the proposed architecture. The simulation results of the designed 4 digit QAC show a sampling rate of 6 MHz and a power dissipation of 1 mW with a single power supply of 3.3 V for a double poly four metal standard CMOS 0.35 /spl square/ n-well technology.\",\"PeriodicalId\":297353,\"journal\":{\"name\":\"Proceedings 31st IEEE International Symposium on Multiple-Valued Logic\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 31st IEEE International Symposium on Multiple-Valued Logic\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISMVL.2001.924556\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 31st IEEE International Symposium on Multiple-Valued Logic","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISMVL.2001.924556","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 4 digit CMOS quaternary to analog converter with current switch and neuron MOS down-literal circuit
This paper describes a 3.3 V low power 4 digit CMOS quaternary to analog converter (QAC) designed with a neuron MOS down literal circuit block and cascode current mirror source block. The neuron MOS down literal architecture allows the designed QAC to accept not only 4 level voltage inputs, but also a high speed sampling rate quaternary voltage source at LSB. Fast settling time and low power consumption of the QAC are achieved by utilizing the proposed architecture. The simulation results of the designed 4 digit QAC show a sampling rate of 6 MHz and a power dissipation of 1 mW with a single power supply of 3.3 V for a double poly four metal standard CMOS 0.35 /spl square/ n-well technology.