{"title":"包含寄生传导效应的HEMT直流模型","authors":"M. Saleh, M. El-Nokali","doi":"10.1109/UGIM.1991.148143","DOIUrl":null,"url":null,"abstract":"A DC model for AlGaAs-GaAs high electron mobility transistor (HEMT) is proposed. The model considers the parasitic parallel conduction in AlGaAs, which becomes important for large gate voltages, together with other important effects, such as field-dependent mobility, channel length modulation, maximum concentration of the two-dimensional electron gas, and series resistances. The theoretical predictions of the model are compared with the experimental data and are found to be in good agreement over a wide range of bias conditions.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"127 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A DC model for the HEMT including the effect of parasitic conduction\",\"authors\":\"M. Saleh, M. El-Nokali\",\"doi\":\"10.1109/UGIM.1991.148143\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A DC model for AlGaAs-GaAs high electron mobility transistor (HEMT) is proposed. The model considers the parasitic parallel conduction in AlGaAs, which becomes important for large gate voltages, together with other important effects, such as field-dependent mobility, channel length modulation, maximum concentration of the two-dimensional electron gas, and series resistances. The theoretical predictions of the model are compared with the experimental data and are found to be in good agreement over a wide range of bias conditions.<<ETX>>\",\"PeriodicalId\":163406,\"journal\":{\"name\":\"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium\",\"volume\":\"127 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/UGIM.1991.148143\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UGIM.1991.148143","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A DC model for the HEMT including the effect of parasitic conduction
A DC model for AlGaAs-GaAs high electron mobility transistor (HEMT) is proposed. The model considers the parasitic parallel conduction in AlGaAs, which becomes important for large gate voltages, together with other important effects, such as field-dependent mobility, channel length modulation, maximum concentration of the two-dimensional electron gas, and series resistances. The theoretical predictions of the model are compared with the experimental data and are found to be in good agreement over a wide range of bias conditions.<>
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