石墨烯/氮化硼异质结构中带隙和电流的调节

2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI:10.1109/IWCE.2014.6865869

V. Tran, J. Saint-Martin, P. Dollfus

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引用次数: 1

摘要

通过原子紧密结合模拟，我们研究了由扶手椅BN纳米带和两个扶手椅石墨烯带组成的异质结构，其中扶手椅石墨烯带可以打开高带隙。我们表明，这种带隙可以通过施加相对较弱的横向电场来显着抑制。这种效应可以用来增强石墨烯晶体管的通/关电流比。

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Modulation of bandgap and current in Graphene/BN heterostructures by tuning the transverse electric field

By means of atomistic Tight Binding simulations, we study heterostructures made of an armchair BN nanoribbon sided by two armchair graphene ribbons where a high band gap can be opened. We show that this band gap can be significantly suppressed by applying a relatively weak transverse electric field. This effect can be used to strongly enhance the on/off current ratio higher in graphene transistors.

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2014 International Workshop on Computational Electronics (IWCE)

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