Towards GaN500-based High Temperature ICs: Characterization and Modeling up to 600°C

This paper contributes toward the implementation of Gallium Nitride (GaN)-based integrated circuits (ICs) intended for high-temperature (HT) applications. We present the implementation and HT characterization of epitaxial AlGaN/GaN Heterojunction Field Effect Transistors (HFETs). The AlGaN/GaN HFETs are remarkably stable enabling operation above 600°C. The characterization results are used to extract an extended version of the Angelov model of GaN HFETs after considering the temperature as a variable parameter. A MATLAB program is used to fit the developed model with experimental I- V characteristics and a R-squared regression of 0.998 was attained over a wide temperature range extending from 25°C to 500°C. The extracted model is intended to be included in a design kit capturing the temperature effects and enabling accurate design simulations.