通量量子隧穿效应及其对实验临界电流密度的影响

H. Wen, Zx Zhao, R. Griessen
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引用次数: 0

摘要

利用磁扫描法,得到了实验电流密度和归一化弛豫率与温度和磁场的关系。基于集体钉钉和热激活磁通运动模型,计算了零活化能对应的真临界电流密度,从而区分了量子隧穿效应和热激活效应对实验临界电流密度的影响。发现当温度低于10 K时,由于通量量子隧穿的发生,当T接近0 K时,弛豫速率不会降为零。这种额外的磁通运动进一步降低了实验临界电流密度j,使其随着温度的降低而饱和。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
FLUX QUANTUM TUNNELING EFFECT AND ITS INFLUENCE ON THE EXPERIMENTAL CRITICAL-CURRENT DENSITY
By using magnetic sweeping method, the temperature and magnetic field dependencies of the experimental current density and the normalized relaxation rate have been obtained. The true critical current density corresponding to the zero activation energy has been carried out based on the collective-pinning and the thermally-activated flux motion models, and therefore the influences of the quantum tunneling effect and the thermal activation effect on the experimental critical current density are distinguished. It is found that, with temperature lower than 10 K, the relaxation rate will not drop to zero when T approaches zero K because of the occurrence of the flux quantum tunneling. This additional flux motion further reduces the experimental critical current density j making it saturated with lowering temperature.
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