k波段GaAs MMIC功率场效应管放大器

1987 17th European Microwave Conference Pub Date : 1987-10-01 DOI:10.1109/EUMA.1987.333634

H.-L.A. Hung, A. Ezzeddine, F. Phelleps, J. Bass, H. Huang

{"title":"k波段GaAs MMIC功率场效应管放大器","authors":"H.-L.A. Hung, A. Ezzeddine, F. Phelleps, J. Bass, H. Huang","doi":"10.1109/EUMA.1987.333634","DOIUrl":null,"url":null,"abstract":"K-band monolithic power GaAs FET amplifier modules have been developed. These single-ended modules provide a linear gain of 4.5 dB and out-put power of 27 dBm in the 17.7- to 20.5-GHz band. At 19 GHz, a balanced module has achieved an output power of up to 1.5 W (0.52 W/mm), while a cascaded multistage amplifier has demonstrated a linear power gain of 26.2 dB and output power of 1.33 W. These 1.7- × 1.8-mm MMICs include DC-blocking capacitors and bias networks.","PeriodicalId":208245,"journal":{"name":"1987 17th European Microwave Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"GaAs MMIC Power FET Amplifiers at K-Band\",\"authors\":\"H.-L.A. Hung, A. Ezzeddine, F. Phelleps, J. Bass, H. Huang\",\"doi\":\"10.1109/EUMA.1987.333634\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"K-band monolithic power GaAs FET amplifier modules have been developed. These single-ended modules provide a linear gain of 4.5 dB and out-put power of 27 dBm in the 17.7- to 20.5-GHz band. At 19 GHz, a balanced module has achieved an output power of up to 1.5 W (0.52 W/mm), while a cascaded multistage amplifier has demonstrated a linear power gain of 26.2 dB and output power of 1.33 W. These 1.7- × 1.8-mm MMICs include DC-blocking capacitors and bias networks.\",\"PeriodicalId\":208245,\"journal\":{\"name\":\"1987 17th European Microwave Conference\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1987 17th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1987.333634\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 17th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1987.333634","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

研制了k波段单片功率GaAs FET放大器模块。这些单端模块在17.7- 20.5 ghz频段提供4.5 dB的线性增益和27 dBm的输出功率。在19 GHz时，平衡模块的输出功率高达1.5 W (0.52 W/mm)，而级联多级放大器的线性功率增益为26.2 dB，输出功率为1.33 W。这些1.7 × 1.8毫米mmic包括直流阻塞电容器和偏置网络。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

GaAs MMIC Power FET Amplifiers at K-Band

K-band monolithic power GaAs FET amplifier modules have been developed. These single-ended modules provide a linear gain of 4.5 dB and out-put power of 27 dBm in the 17.7- to 20.5-GHz band. At 19 GHz, a balanced module has achieved an output power of up to 1.5 W (0.52 W/mm), while a cascaded multistage amplifier has demonstrated a linear power gain of 26.2 dB and output power of 1.33 W. These 1.7- × 1.8-mm MMICs include DC-blocking capacitors and bias networks.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1987 17th European Microwave Conference

自引率

0.00%

发文量