微电路中的单事件功能中断(SEFI)灵敏度

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698915

R. Koga, S. Penzin, K. Crawford, W. Crain

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引用次数: 75

摘要

用重离子测量了几种微电路的单事件功能中断(SEFI)灵敏度。虽然简单的微电路不受SEFI的影响，但许多复杂的微电路在不同程度上容易受到SEFI的影响。虽然导致SEFI的原因有很多，但离子辐照测试结合对设备架构的理解有助于改进技术，以减少由SEFI引起的不良影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Single event functional interrupt (SEFI) sensitivity in microcircuits

The single event functional interrupt (SEFI) sensitivity of several types of microcircuits is measured with heavy ions. While simple microcircuits have not been affected by SEFI, many complex microcircuits are vulnerable to it in varying degrees. Although there are many causes for SEFIs, ion irradiation testing in conjunction with an understanding of device architecture helps refine techniques which can be used to lessen the ill effects caused by SEFI.

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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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