1.5 v线性CMOS OTA与-60dB IM3高频应用

Tien-Yu Lo, C. Hung
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引用次数: 12

摘要

提出了一种适用于低压高频应用的线性化跨导运算放大器(OTA)的新结构。在纳米级CMOS技术下,采用双差分对和源退化结构,可以最大限度地降低小特征尺寸引起的短通道效应引起的非线性。设计了鲁棒共模控制系统,保证了输入输出共模的稳定性,从而减小了共模电压变化引起的畸变。在线性区域使用MOS晶体管可以实现调谐能力。OTA的线性度约为- 60db三阶互调(IM3)失真,在40 MHz时高达0.9 VPP。该OTA采用TSMC 180 nm Deep N-WELL CMOS工艺制备。它占地面积很小,为15.1 × 10- 3mm2,在1.5 v供电电压下功耗为9.5 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
1.5-V Linear CMOS OTA with -60dB IM3 for High Frequency Applications
A novel configuration of linearized Operational Transconductance Amplifier (OTA) for low-voltage and high frequency applications is proposed. By using double differential pairs and the source degeneration structure under nano-scale CMOS technology, the nonlinearity caused by short channel effect from small feature size can be minimized. A robust common-mode control system is designed for input and output common-mode stability, and thus reduces distortion caused by common-mode voltage variation. Tuning ability can be achieved by using MOS transistors in the linear region. The linearity of the OTA is about -60dB third-order inter- modulation (IM3) distortion for up to 0.9 VPP at 40 MHz. Ths OTA was fabricated by the TSMC 180-nm Deep N-WELL CMOS process. It occupies a small area of 15.1 x 10-3 mm2 and the power consumption is 9.5 mW under a 1.5-V supply voltage.
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