8英寸基于hfox的晶圆级RRAM，用于1S-1R交叉点存储应用

2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS) Pub Date : 2014-10-01 DOI:10.1109/NVMTS.2014.7060853

J. Woo, Jeonghwan Song, Kibong Moon, Seokjae Lim, Daeseok Lee, Sangheon Lee, A. Prakash, H. Hwang, J. Baek, K. Kwon

{"title":"8英寸基于hfox的晶圆级RRAM，用于1S-1R交叉点存储应用","authors":"J. Woo, Jeonghwan Song, Kibong Moon, Seokjae Lim, Daeseok Lee, Sangheon Lee, A. Prakash, H. Hwang, J. Baek, K. Kwon","doi":"10.1109/NVMTS.2014.7060853","DOIUrl":null,"url":null,"abstract":"In this paper, a bipolar resistive random access memory (RRAM) device with a fab-friendly materials stack (TiN/Ti/HfO2/TiN) and process in a via-hole substrate with 200 nm cell size was successfully demonstrated on an 8-inch wafer scale. Furthermore, the robust device characteristics with reliable switching uniformity and stability were experimentally confirmed at the wafer level. Finally, from the standpoint of array architecture, the fabricated memory cell was evaluated with various selector devices such as a conventional silicon-based transistor and a newly developed tunneling-based diode device.","PeriodicalId":275170,"journal":{"name":"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"8-inch wafer-scale HfOx-based RRAM for 1S-1R cross-point memory applications\",\"authors\":\"J. Woo, Jeonghwan Song, Kibong Moon, Seokjae Lim, Daeseok Lee, Sangheon Lee, A. Prakash, H. Hwang, J. Baek, K. Kwon\",\"doi\":\"10.1109/NVMTS.2014.7060853\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a bipolar resistive random access memory (RRAM) device with a fab-friendly materials stack (TiN/Ti/HfO2/TiN) and process in a via-hole substrate with 200 nm cell size was successfully demonstrated on an 8-inch wafer scale. Furthermore, the robust device characteristics with reliable switching uniformity and stability were experimentally confirmed at the wafer level. Finally, from the standpoint of array architecture, the fabricated memory cell was evaluated with various selector devices such as a conventional silicon-based transistor and a newly developed tunneling-based diode device.\",\"PeriodicalId\":275170,\"journal\":{\"name\":\"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NVMTS.2014.7060853\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NVMTS.2014.7060853","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文成功地在8英寸晶圆尺度上展示了一种双极电阻随机存取存储器(RRAM)器件，该器件具有晶圆友好型材料堆栈(TiN/Ti/HfO2/TiN)和200 nm晶圆尺寸的过孔衬底工艺。实验结果表明，该器件具有可靠的开关均匀性和稳定性。最后，从阵列结构的角度出发，采用不同的选择器件，如传统的硅基晶体管和新开发的基于隧道的二极管器件，对制备的存储单元进行了评估。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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8-inch wafer-scale HfOx-based RRAM for 1S-1R cross-point memory applications

In this paper, a bipolar resistive random access memory (RRAM) device with a fab-friendly materials stack (TiN/Ti/HfO2/TiN) and process in a via-hole substrate with 200 nm cell size was successfully demonstrated on an 8-inch wafer scale. Furthermore, the robust device characteristics with reliable switching uniformity and stability were experimentally confirmed at the wafer level. Finally, from the standpoint of array architecture, the fabricated memory cell was evaluated with various selector devices such as a conventional silicon-based transistor and a newly developed tunneling-based diode device.

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2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)

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