{"title":"超高数据速率毫米波PIN二极管的开关性能","authors":"F. Bosch, O. Petersen","doi":"10.1109/MWSYM.1977.1124408","DOIUrl":null,"url":null,"abstract":"The 300 Mb/s switching performance of 40 to 110 GHz PIN diodes is presented as a function of their storage and fall time, which varied from 2 to 18 and 0.2 to 1.2 ns, respectively.","PeriodicalId":299607,"journal":{"name":"1977 IEEE MTT-S International Microwave Symposium Digest","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Switching Performance of mm-Wave PIN Diodes for Ultra High Data Rates\",\"authors\":\"F. Bosch, O. Petersen\",\"doi\":\"10.1109/MWSYM.1977.1124408\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The 300 Mb/s switching performance of 40 to 110 GHz PIN diodes is presented as a function of their storage and fall time, which varied from 2 to 18 and 0.2 to 1.2 ns, respectively.\",\"PeriodicalId\":299607,\"journal\":{\"name\":\"1977 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1977-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1977.1124408\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1977.1124408","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Switching Performance of mm-Wave PIN Diodes for Ultra High Data Rates
The 300 Mb/s switching performance of 40 to 110 GHz PIN diodes is presented as a function of their storage and fall time, which varied from 2 to 18 and 0.2 to 1.2 ns, respectively.
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