电离杂质对电子通过量子盘的顺序隧穿转移的影响

M. Ishida, M. Yamaguchi, N. Sawaki
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引用次数: 1

摘要

用有限元法求解时变薛定谔方程,分析了注入二维砷化镓圆盘的波包的运动。发现电离杂质的存在改变了波包在圆盘中的运动,从而改变了与圆盘相连的电极的隧穿转移概率。根据电子在势垒前的概率振幅,讨论了作为杂质位置函数的转移概率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of ionized impurity on the sequential tunneling transfer of an electron through a quantum disk
The motion of a wavepacket injected into a two dimensional GaAs disk was analysed by solving the time dependent Schrodinger equation with the finite element method. It was found that the presence of an ionized impurity varies the motion of the wavepacket in the disk which results in a modification of the tunneling transfer probability to an electrode connected to the disk. The transfer probability as a function of the position of an impurity is discussed in terms of the probability amplitude of electrons in front of the potential barrier.
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