高频、小尺寸双极晶体管的紧凑建模

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791590

D. Pulfrey, A.R. St. Denis, M. Vaidyanathan

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引用次数: 1

摘要

总结了高速双极晶体管准弹道基宽(平均自由程长度)紧凑模型的最新进展。通过与玻尔兹曼输运方程解的比较，验证了基于漂移扩散方程的模型的正确性。给出了重要的直流和交流器件参数的实用和有根据的紧凑表达式。

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Compact modeling of high-frequency, small-dimension bipolar transistors

Recent progress in the development of compact models for high-speed bipolar transistors with quasi-ballistic base widths (on the order of a mean-free path length) is summarized. The correctness of basing such models on the drift-diffusion equation is examined by comparing results with solutions to the Boltzmann transport equation. Useful and well-founded compact expressions are presented for important dc and ac device parameters.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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