{"title":"带20 V BVceo的140 GHz f/sub max/ InAlAs/InGaAs脉冲掺杂InGaAlAs四元集电极HBT","authors":"J. Cowles, L. Tran, T. Block, D. Streit, A. Oki","doi":"10.1109/DRC.1995.496281","DOIUrl":null,"url":null,"abstract":"Although InP-based HBTs have shown excellent RF performance, the low breakdown and Early voltages of InGaAs collectors have limited their insertion into high linearity and power amplifiers. InAlAs/InGaAs NpN double-HBTs with compositionally graded quaternary InGaAlAs collectors realized a high BVceo of 20V with minimal carrier blocking up to high current densities. The same device exhibited an ft and fmax of 58 GHz and 140 GHz, respectively, which is comparable to otherwise identical InGaAs collector devices.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A 140 GHz f/sub max/ InAlAs/InGaAs pulse-doped InGaAlAs quaternary collector HBT with a 20 V BVceo\",\"authors\":\"J. Cowles, L. Tran, T. Block, D. Streit, A. Oki\",\"doi\":\"10.1109/DRC.1995.496281\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Although InP-based HBTs have shown excellent RF performance, the low breakdown and Early voltages of InGaAs collectors have limited their insertion into high linearity and power amplifiers. InAlAs/InGaAs NpN double-HBTs with compositionally graded quaternary InGaAlAs collectors realized a high BVceo of 20V with minimal carrier blocking up to high current densities. The same device exhibited an ft and fmax of 58 GHz and 140 GHz, respectively, which is comparable to otherwise identical InGaAs collector devices.\",\"PeriodicalId\":326645,\"journal\":{\"name\":\"1995 53rd Annual Device Research Conference Digest\",\"volume\":\"111 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 53rd Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1995.496281\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496281","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 140 GHz f/sub max/ InAlAs/InGaAs pulse-doped InGaAlAs quaternary collector HBT with a 20 V BVceo
Although InP-based HBTs have shown excellent RF performance, the low breakdown and Early voltages of InGaAs collectors have limited their insertion into high linearity and power amplifiers. InAlAs/InGaAs NpN double-HBTs with compositionally graded quaternary InGaAlAs collectors realized a high BVceo of 20V with minimal carrier blocking up to high current densities. The same device exhibited an ft and fmax of 58 GHz and 140 GHz, respectively, which is comparable to otherwise identical InGaAs collector devices.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
