一个100W的e类GaN HEMT，在2GHz下具有75%的漏极效率

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282753

N. Ui, S. Sano

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引用次数: 31

摘要

研制了一种用于大功率高效放大器的100W e类GaN HEMT器件。取得了较好的测量结果;在2.14GHz和50V漏极偏置工作时，漏极效率为75%，连续输出功率为100W，相关功率增益为12dB，具有可接受的频带特性，简单的e类电路拓扑

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A 100W Class-E GaN HEMT with 75% Drain Efficiency at 2GHz

A 100W class-E GaN HEMT device has been developed for high power and high efficiency amplifier. The authors achieved superior measurement results; drain efficiency of 75%, CW output power of 100W and associated power gain of 12dB at 2.14GHz and 50V drain bias operation with acceptable frequency band characteristics in simple class-E circuit topology

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2006 European Microwave Integrated Circuits Conference

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