高速存储器总线的离相串扰行为和设计考虑

A. J. Chen, Hao Wang
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引用次数: 2

摘要

由于比特宽度的减小和噪声水平的增加,互连边界在更高的速度下迅速缩小。串扰影响仍然是单端存储总线如DDR3和GDDR5互连的最大问题。xtalk耦合的相位关系对互连性能有重要影响。本文概述了几种类型的离相串扰及其对系统裕度的影响。它还提供了分析其影响的方法和减轻其影响的设计考虑。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Off-phase crosstalk behaviour and design considerations for high-speed memory buses
The interconnect margins shrink rapidly at higher speed due to reduced bit width and increased noise level. Crosstalk impact remains the biggest concern for the single-ended memory busses such as DDR3 and GDDR5 interconnect. The phase relationship of the xtalk coupling plays an important role on interconnect performance. This paper outlines several types of off-phase crosstalk and their impact to system margin. It also provides the methodology to analyse their effects and design considerations to mitigate their impact.
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