{"title":"ReDRAM:加速批量位操作的可重构处理平台","authors":"Shaahin Angizi, Deliang Fan","doi":"10.1109/iccad45719.2019.8942101","DOIUrl":null,"url":null,"abstract":"In this paper, we propose ReDRAM, as a reconfigurable DRAM-based processing-in-memory (PIM) accelerator, which transforms current DRAM architecture to massively parallel computational units exploiting the high internal bandwidth of modern memory chips. ReDRAM uses the analog operation of DRAM sub-arrays and elevates it to implement a full set of 1- and 2-input bulk bit-wise operations (NOT, (N)AND, (N)OR, and even X(N)OR) between operands stored in the same bit-line, based on a new dual-row activation mechanism with a modest change to peripheral circuits such sense amplifiers. ReDRAM can be leveraged to greatly reduce energy consumption and latency of complex in-DRAM logic computations relying on state-of-the-art mechanisms based on triple-row activation, dual-contact cells, row initialization, NOR style, etc. The extensive circuit-architecture simulations show that ReDRAM achieves on average 54× and 7.1× higher throughput for performing bulk bit-wise operations compared with CPU and GPU, respectively. Besides, ReDRAM outperforms recent processing-in-DRAM platforms with up to 3.7× better performance.","PeriodicalId":363364,"journal":{"name":"2019 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"34","resultStr":"{\"title\":\"ReDRAM: A Reconfigurable Processing-in-DRAM Platform for Accelerating Bulk Bit-Wise Operations\",\"authors\":\"Shaahin Angizi, Deliang Fan\",\"doi\":\"10.1109/iccad45719.2019.8942101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we propose ReDRAM, as a reconfigurable DRAM-based processing-in-memory (PIM) accelerator, which transforms current DRAM architecture to massively parallel computational units exploiting the high internal bandwidth of modern memory chips. ReDRAM uses the analog operation of DRAM sub-arrays and elevates it to implement a full set of 1- and 2-input bulk bit-wise operations (NOT, (N)AND, (N)OR, and even X(N)OR) between operands stored in the same bit-line, based on a new dual-row activation mechanism with a modest change to peripheral circuits such sense amplifiers. ReDRAM can be leveraged to greatly reduce energy consumption and latency of complex in-DRAM logic computations relying on state-of-the-art mechanisms based on triple-row activation, dual-contact cells, row initialization, NOR style, etc. The extensive circuit-architecture simulations show that ReDRAM achieves on average 54× and 7.1× higher throughput for performing bulk bit-wise operations compared with CPU and GPU, respectively. Besides, ReDRAM outperforms recent processing-in-DRAM platforms with up to 3.7× better performance.\",\"PeriodicalId\":363364,\"journal\":{\"name\":\"2019 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"34\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/iccad45719.2019.8942101\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iccad45719.2019.8942101","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
ReDRAM: A Reconfigurable Processing-in-DRAM Platform for Accelerating Bulk Bit-Wise Operations
In this paper, we propose ReDRAM, as a reconfigurable DRAM-based processing-in-memory (PIM) accelerator, which transforms current DRAM architecture to massively parallel computational units exploiting the high internal bandwidth of modern memory chips. ReDRAM uses the analog operation of DRAM sub-arrays and elevates it to implement a full set of 1- and 2-input bulk bit-wise operations (NOT, (N)AND, (N)OR, and even X(N)OR) between operands stored in the same bit-line, based on a new dual-row activation mechanism with a modest change to peripheral circuits such sense amplifiers. ReDRAM can be leveraged to greatly reduce energy consumption and latency of complex in-DRAM logic computations relying on state-of-the-art mechanisms based on triple-row activation, dual-contact cells, row initialization, NOR style, etc. The extensive circuit-architecture simulations show that ReDRAM achieves on average 54× and 7.1× higher throughput for performing bulk bit-wise operations compared with CPU and GPU, respectively. Besides, ReDRAM outperforms recent processing-in-DRAM platforms with up to 3.7× better performance.