W. Van Der Stricht, I. Moerman, P. Demeester, E. Thrush, J. Crawley
{"title":"高质量InGaN薄膜和InGaN/GaN量子阱的MOVPE生长","authors":"W. Van Der Stricht, I. Moerman, P. Demeester, E. Thrush, J. Crawley","doi":"10.1109/LEOSST.1997.619247","DOIUrl":null,"url":null,"abstract":"Recently the group III-nitrides (In,Ga)N have attracted much attention because of the high potential for the fabrication of light emitting devices operating in the red to ultraviolet wavelength range. Despite the recent success in realizing devices, only few reports have been made on growth of InGaN. In this paper growth of high quality InGaN films on (0001) sapphire substrates by atmospheric pressure organometallic vapor phase epitaxy in a close spaced vertical rotating disk reactor is investigated. The effect of the growth temperature, V/III ratio and rotation speed is investigated. Some early results on InGaN/GaN quantum well structures are also discussed.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells\",\"authors\":\"W. Van Der Stricht, I. Moerman, P. Demeester, E. Thrush, J. Crawley\",\"doi\":\"10.1109/LEOSST.1997.619247\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recently the group III-nitrides (In,Ga)N have attracted much attention because of the high potential for the fabrication of light emitting devices operating in the red to ultraviolet wavelength range. Despite the recent success in realizing devices, only few reports have been made on growth of InGaN. In this paper growth of high quality InGaN films on (0001) sapphire substrates by atmospheric pressure organometallic vapor phase epitaxy in a close spaced vertical rotating disk reactor is investigated. The effect of the growth temperature, V/III ratio and rotation speed is investigated. Some early results on InGaN/GaN quantum well structures are also discussed.\",\"PeriodicalId\":344325,\"journal\":{\"name\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOSST.1997.619247\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOSST.1997.619247","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells
Recently the group III-nitrides (In,Ga)N have attracted much attention because of the high potential for the fabrication of light emitting devices operating in the red to ultraviolet wavelength range. Despite the recent success in realizing devices, only few reports have been made on growth of InGaN. In this paper growth of high quality InGaN films on (0001) sapphire substrates by atmospheric pressure organometallic vapor phase epitaxy in a close spaced vertical rotating disk reactor is investigated. The effect of the growth temperature, V/III ratio and rotation speed is investigated. Some early results on InGaN/GaN quantum well structures are also discussed.
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