GaInNAs / GaAs多量子阱p-i-n结构中的光电流振荡

2011 3rd Computer Science and Electronic Engineering Conference (CEEC) Pub Date : 2011-07-13 DOI:10.1109/CEEC.2011.5995838

H. Khalil, S. Mazzucato, B. Royall, N. Balkan, J. Puustinen, V. Korpijarvi, M. Guina

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引用次数: 2

摘要

本文研究了p-i-n Ga0.952In0.048N0.016As0.984/GaAs多量子阱(MQW)结构的光电导率随温度的变化规律。在低温下，用950nm波长的光照射时，器件的I-V特性呈阶梯状增加。可见振荡的数目随温度和入射光强而变化，最多可达18个。由于激发的照明能量低于砷化镓带隙，这些振荡只产生于GaInNAs量子阱，并且可以用从子带到相邻量子阱的共振隧穿来解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Photocurrent oscillations in GaInNAs / GaAs multi-quantum well p-i-n structures

In this work the photoconductivity of a p-i-n Ga0.952In0.048N0.016As0.984/GaAs multiple quantum well (MQW) structure is investigated as a function of temperature. At low temperatures step-like increases are observed in the devices I–V characteristic when illuminated with a 950nm wavelength light. The number of visible oscillations varies according to the temperature and incident light intensity with a maximum of 18 being visible. Since the exciting illumination energy is bellow the GaAs bandgap, these oscillations arise only from the GaInNAs quantum wells and can be explained in terms of resonant tunneling from subbands into the adjacent quantum well.

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2011 3rd Computer Science and Electronic Engineering Conference (CEEC)

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