可调谐微波器件用RT/Duroid衬底上BST薄膜的低温结晶

Akhil Raman T. S., Shivakumar Chedurupalli, James Raju K. C.
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引用次数: 0

摘要

将钛酸锶钡(BST-Ba0.5Sr0.5TiO3)薄膜沉积在RT/Duroid衬底上,并在250℃的温度下进行激光退火结晶。激光退火膜为XRD结晶。利用这些介质薄膜制作圆形贴片电容器(CPC)测量了微波介电性能,获得了最大可调性为34%的可调性。因此,在聚合物复合衬底上集成的单片变容管利用了晶体铁电薄膜所表现出的电场相关介电常数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low-temperature crystallization of BST thin films on RT/Duroid substrate for tunable microwave devices
Barium strontium titanate (BST-Ba0.5Sr0.5TiO3) thin films are deposited over RT/Duroid substrate at a temperature of 250°C and are then crystallized by laser annealing. The laser annealed films are XRD crystalline. The microwave dielectric properties are measured by fabricating circular patch capacitor (CPC) using these dielectric films and a maximum tunability of 34% is obtained. Thus, integrated monolithic varactors on a polymer composite substrate exploiting the electric fielddependent dielectric constant exhibited by crystalline ferroelectric thin films are demonstrated.
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