双层多晶硅双极工艺中发射极侧壁隔离对发射极结的影响

Proceedings of the 1988 Bipolar Circuits and Technology Meeting, Pub Date : 1988-09-12 DOI:10.1109/BIPOL.1988.51063

M. C. Wilson, D. Gold, P. Hunt, G. Booker

{"title":"双层多晶硅双极工艺中发射极侧壁隔离对发射极结的影响","authors":"M. C. Wilson, D. Gold, P. Hunt, G. Booker","doi":"10.1109/BIPOL.1988.51063","DOIUrl":null,"url":null,"abstract":"The 2D equi-concentration dopant contours are revealed for the first time for a cross-section through a 1 mu m double-layer polysilicon bipolar device. The planarity of the emitter junction is shown to be dependent on the presence of emitter sidewall spacer filters. Implications for ultrashallow junction devices are presented.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"The effect of emitter sidewall isolation on the emitter junction in a double layer polysilicon bipolar process\",\"authors\":\"M. C. Wilson, D. Gold, P. Hunt, G. Booker\",\"doi\":\"10.1109/BIPOL.1988.51063\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The 2D equi-concentration dopant contours are revealed for the first time for a cross-section through a 1 mu m double-layer polysilicon bipolar device. The planarity of the emitter junction is shown to be dependent on the presence of emitter sidewall spacer filters. Implications for ultrashallow junction devices are presented.<<ETX>>\",\"PeriodicalId\":302949,\"journal\":{\"name\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1988.51063\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51063","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

首次揭示了1 μ m双层多晶硅双极器件横截面的二维等浓度掺杂物轮廓。发射极结的平面度取决于发射极侧壁间隔滤波器的存在。提出了对超浅结器件的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The effect of emitter sidewall isolation on the emitter junction in a double layer polysilicon bipolar process

The 2D equi-concentration dopant contours are revealed for the first time for a cross-section through a 1 mu m double-layer polysilicon bipolar device. The planarity of the emitter junction is shown to be dependent on the presence of emitter sidewall spacer filters. Implications for ultrashallow junction devices are presented.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 1988 Bipolar Circuits and Technology Meeting,

自引率

0.00%

发文量