外延锗提高InGaP/GaAs/Ge多结太阳能电池效率

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-10-17 DOI:10.1109/PVSC.2000.916053

D. Aiken

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引用次数: 15

摘要

三结InGaP/GaAs/Ge太阳能电池由于锗亚电池的过量电流产生能力，导致电流高度不匹配。这种严重的电流失配需要新的方法来提高性能，超越目前的三联结。本文提出了两种提高Ill-V多结效率的方法，以超越目前的三结技术。这两种方法都涉及使用薄外延锗，并且不需要开发新的/spl sim/1 eV光伏材料。理论AM0效率在30%以上。建模表明，相对于目前的InGaP/GaAs/Ge三结太阳能电池，绝对效率增益的潜力超过1.5%。

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InGaP/GaAs/Ge multi-junction solar cell efficiency improvements using epitaxial germanium

Triple junction InGaP/GaAs/Ge solar cells are highly current mismatched due to the excess current generating capability of the germanium subcell. This severe current mismatch invites new approaches for increasing performance beyond that of current triple junctions. Presented here are two approaches for improving the efficiency of Ill-V multi-junctions beyond that of current triple junction technology. Both of these approaches involve the use of thin epitaxial germanium and do not require the development of new /spl sim/1 eV photovoltaic materials. The theoretical AM0 efficiency is over 30%. Modeling suggests the potential for over 1.5% absolute efficiency gain with respect to current InGaP/GaAs/Ge triple junction solar cells.

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Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)

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