用于雷达和成像应用的高集成<0.14mm2D波段接收器前端，采用130 nm SiGe BiCMOS技术

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 1900-01-01 DOI:10.1109/SIRF.2019.8709129

E. Aguilar, V. Issakov, R. Weigel

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引用次数: 6

摘要

提出了两种具有竞争性能的低功耗d波段接收机前端，用于雷达和成像应用。接收机包括无源和有源单斜差分转换器，分别实现为超紧凑的基于marchandon的平衡器和基于差分对的有源平衡器。接收机在134GHz(有源平衡)和124GHz(无源平衡)下分别获得24.9dB和20.27dB的测量转换增益(CG)，而功耗分别为425mW和330mW。在114-146GHz频率范围内，有源方案实现了32GHz的宽带，而无源方案在112-147GHz频率范围内实现了10dB的带宽。无源方法实现峰值转换增益为20。126GHz时27dB。所提出的结果提供了具有竞争力的性能，并且在超小硅面积(0.14和0.1 mm^{\mathbf{2}})$方面与报道的接收器前端相比具有优势。前端适用于集成在高集成度的d波段雷达接收机阵列以及高密度成像阵列中。

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Highly-Integrated <0.14mm2D -Band Receiver Front-Ends for Radar and Imaging Applications in a 130 nm SiGe BiCMOS Technology

Two low-power D-band receiver front-ends with competitive performance for radar and imaging applications are presented. The receivers include passive and active singleended-to-differential converters realized as an ultra-compact Marchand-based balun and as a differential-pair-based active balun, respectively. The receivers achieve measured conversion gains (CG) of 24.9dB at 134GHz (active balun) and 20.27dB at 124GHz (passive balun) while consuming 425mW and 330mW correspondingly. A wide bandwidth of 32GHz is achieved for the active variant in the 114-146GHz frequency range while the passive approach achieves a CG $\gt 10dB$ in the 112-147GHz frequency range. The passive approach achieves a peak conversion gain of 20.$27dB at 126GHz. The presented results offer competitive performance and compare favorably to reported receiver front-ends in terms of ultra-small silicon area (0.14 and 0.$1mm^{\mathbf{2}})$. The front-ends are suitable for integration in highly-integrated D-Band radar receiver arrays as well as for high-density imaging arrays.

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来源期刊

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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