{"title":"ω栅极硅纳米线SOI pmosfet负偏置温度不稳定性研究","authors":"V. Silva, G. Wirth, J. Martino, P. Agopian","doi":"10.1109/SBMicro.2019.8919276","DOIUrl":null,"url":null,"abstract":"The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high ($\\Delta$ V $\\approx200 -300$mV – for W = 10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs\",\"authors\":\"V. Silva, G. Wirth, J. Martino, P. Agopian\",\"doi\":\"10.1109/SBMicro.2019.8919276\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high ($\\\\Delta$ V $\\\\approx200 -300$mV – for W = 10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths.\",\"PeriodicalId\":403446,\"journal\":{\"name\":\"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMicro.2019.8919276\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMicro.2019.8919276","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
负偏置温度不稳定性(NBTI)是先进技术节点的重要可靠性参数。本文提出了一种在ω栅极纳米线(NW) pMOSFET中进行NBTI的实验研究。为了更好地理解NW晶体管中的NBTI效应，进行了三维数值模拟。结果表明，NW中NBTI的性能高($\Delta$ V $\approx200 -300$ mV -对于W = 10nm)，这是由于较高的栅极氧化物电场加速了NBTI效应，提供了较高的降解效果。本研究针对不同的通道宽度和长度进行。
A Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs
The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high ($\Delta$ V $\approx200 -300$mV – for W = 10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
