多栅极mosfet的紧凑射频建模

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282790

B. Iñíguez, A. Lázaro, O. Moldovan

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引用次数: 4

摘要

我们提出了一种紧凑的多栅极mosfet建模方案，该方案基于从一维泊松方程导出的统一电荷控制模型，该模型已使用有源传输线方法扩展到射频区域。在每个片段中使用局部小信号参数(包括噪声源)的紧凑表达式。所得到的宏观模型已用于研究多栅极器件的射频和噪声性能

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Compact RF Modeling of Multiple-Gate MOSFETs

We present a compact modeling scheme for multiple-gate MOSFETs, based on a unified charge control model derived from the 1D Poisson's equation, which has been extended to the RF regime using the active transmission line approach. Compact expressions of the local small-signal parameters, including noise sources, are used in each segment. The resulting macro-models have been used to study the RF and noise performances of multiple-gate devices

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2006 European Microwave Integrated Circuits Conference

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