电沉积CuInSe/ sub2 /薄膜器件

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-12-31 DOI:10.1109/PVSC.1997.654152

R. Raffaelle, J. Mantovani, R.B. Friedfeld, S. Bailey, S. Hubbard

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引用次数: 1

摘要

作者一直在研究二硒化铜铟(CIS)薄膜和结的电化学沉积。CIS被认为是用于多晶薄膜光伏太阳能电池的最佳吸收材料之一。电沉积是一种简单、廉价的制备CIS薄膜的方法。他们已经生产了p型和n型CIS薄膜，以及从单一水溶液中电沉积的CIS p-n结。利用透射光谱法测定了这些薄膜的光学带隙。测量了单个薄膜上的肖特基势垒和pn结的电流与电压特性。

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Electrodeposited CuInSe/sub 2/ thin film devices

The authors have been investigating the electrochemical deposition of thin films and junctions based on copper indium diselenide (CIS). CIS is considered to be one of the best absorber materials for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a simple and inexpensive method for producing thin-film CIS. They have produced both p and n type CIS thin films, as well as a CIS p-n junction electrodeposited from a single aqueous solution. Optical bandgaps were determined for these thin films using transmission spectroscopy. Current versus voltage characteristics were measured for Schottky barriers on the individual films and for the p-n junction.

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Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997

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