一个精确的非准静态MOSFET模型，用于射频和高速电路的仿真

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852823

Xiaodong Jin, K. Cao, J. Ou, Weidong Liu, Yuhua Cheng, M. Matloubian, C. Hu

{"title":"一个精确的非准静态MOSFET模型，用于射频和高速电路的仿真","authors":"Xiaodong Jin, K. Cao, J. Ou, Weidong Liu, Yuhua Cheng, M. Matloubian, C. Hu","doi":"10.1109/VLSIT.2000.852823","DOIUrl":null,"url":null,"abstract":"An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement.","PeriodicalId":268624,"journal":{"name":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"An accurate non-quasistatic MOSFET model for simulation of RF and high speed circuits\",\"authors\":\"Xiaodong Jin, K. Cao, J. Ou, Weidong Liu, Yuhua Cheng, M. Matloubian, C. Hu\",\"doi\":\"10.1109/VLSIT.2000.852823\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement.\",\"PeriodicalId\":268624,\"journal\":{\"name\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2000.852823\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2000.852823","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

提出了一种精确的基于松弛时间的非准静态SPICE模型，用于高速和射频电路的交流和瞬态仿真。还提供了一种提取松弛时间的方法。它对Vgs和Vds以及信道长度的依赖是基于物理的，并建立在模型中。最后通过二维仿真和实测对模型进行了验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

An accurate non-quasistatic MOSFET model for simulation of RF and high speed circuits

An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

自引率

0.00%

发文量