Electromagnetic Interference Attacks on GaN Half- Bridge Module

Electromagnetic interference (EMI) attacks on a GaN half-bridge module can falsely trigger the gate signal, leading to potential destructive damages. However, the false triggering issue and the corresponding protective measures are not well studied. This paper firstly presents the EMI attacks on a Gallium nitride (GaN) half-bridge module, demonstrating false triggering effects caused by low energy EM pulses. The susceptibility level of a commercially available GaN half-bridge is obtained over a frequency range from 100 kHz to 400 MHz, and it reveals that an attack at a lower frequency is prone to cause prominent interference effects.