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引用次数: 4
摘要
本文介绍了一种低能CMOS绝热逆变器(Ib-driver)的设计。所提出的ib驱动器结构采用互补的输入、输出和双轨结构。当在0.13 μ m CMOS 1.2 V技术上实现时，在大容性负载条件下，ib -驱动器在能量延迟积(21%)方面优于参考绝热电路(sk-驱动器)，有源面积(34%)低。所提出的逆变器具有高容性负载(20pf)的全摆幅。
A CMOS adiabatic inverter operating with a single clock power supply to reduce non-adiabatic loss
This paper presents the design of a low energy CMOS adiabatic inverter (Ib-driver). The proposed Ib-driver structure uses complementary input, output and a dual-rail structure. When implemented on a 0.13 mum CMOS 1.2 V technology, under the large capacitive loading condition, Ib-driver performs better than the reference adiabatic circuit (sk-driver) in terms of the energy-delay product (21%), with active area which is (34%) lower. Proposed inverter has a full swing for high capacitive loads (20 pF).
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