60ghz频段高增益MMIC级联码HBT放大器

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964351

H. Tanaka, E. Suematsu, S. Handa, Y. Motouchi, N. Takahashi, A. Yamada, N. Matsumoto, H. Sato

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引用次数: 1

摘要

本文提出了一种采用InGaP/GaAs HBTs的60ghz频段高增益MMIC级联放大器。为了实现高增益小尺寸放大器，采用了由一个共发射极HBT和一个共基极HBT组成的级联码结构和开放式存根虚拟接地技术。所制备的尺寸为1.2mm/spl倍/1.3mm的MMIC级联HBT放大器在60ghz频段的增益为20dB。

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60GHz-band high-gain MMIC cascode HBT amplifier

In this paper we present a 60GHz-band high-gain MMIC cascode amplifier with InGaP/GaAs HBTs. The cascode configuration which consists of a common-emitter HBT followed by a common-base HBT, and a virtual grounding technique using open-ended stubs is adopted to achieve a high-gain and small-size amplifier. The fabricated MMIC cascode HBT amplifier with 1.2mm/spl times/1.3mm size shows a gain of 20dB in the 60GHz-band.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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