60ghz频段高增益MMIC级联码HBT放大器

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964351

H. Tanaka, E. Suematsu, S. Handa, Y. Motouchi, N. Takahashi, A. Yamada, N. Matsumoto, H. Sato

{"title":"60ghz频段高增益MMIC级联码HBT放大器","authors":"H. Tanaka, E. Suematsu, S. Handa, Y. Motouchi, N. Takahashi, A. Yamada, N. Matsumoto, H. Sato","doi":"10.1109/GAAS.2001.964351","DOIUrl":null,"url":null,"abstract":"In this paper we present a 60GHz-band high-gain MMIC cascode amplifier with InGaP/GaAs HBTs. The cascode configuration which consists of a common-emitter HBT followed by a common-base HBT, and a virtual grounding technique using open-ended stubs is adopted to achieve a high-gain and small-size amplifier. The fabricated MMIC cascode HBT amplifier with 1.2mm/spl times/1.3mm size shows a gain of 20dB in the 60GHz-band.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"60GHz-band high-gain MMIC cascode HBT amplifier\",\"authors\":\"H. Tanaka, E. Suematsu, S. Handa, Y. Motouchi, N. Takahashi, A. Yamada, N. Matsumoto, H. Sato\",\"doi\":\"10.1109/GAAS.2001.964351\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present a 60GHz-band high-gain MMIC cascode amplifier with InGaP/GaAs HBTs. The cascode configuration which consists of a common-emitter HBT followed by a common-base HBT, and a virtual grounding technique using open-ended stubs is adopted to achieve a high-gain and small-size amplifier. The fabricated MMIC cascode HBT amplifier with 1.2mm/spl times/1.3mm size shows a gain of 20dB in the 60GHz-band.\",\"PeriodicalId\":269944,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2001.964351\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964351","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文提出了一种采用InGaP/GaAs HBTs的60ghz频段高增益MMIC级联放大器。为了实现高增益小尺寸放大器，采用了由一个共发射极HBT和一个共基极HBT组成的级联码结构和开放式存根虚拟接地技术。所制备的尺寸为1.2mm/spl倍/1.3mm的MMIC级联HBT放大器在60ghz频段的增益为20dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

60GHz-band high-gain MMIC cascode HBT amplifier

In this paper we present a 60GHz-band high-gain MMIC cascode amplifier with InGaP/GaAs HBTs. The cascode configuration which consists of a common-emitter HBT followed by a common-base HBT, and a virtual grounding technique using open-ended stubs is adopted to achieve a high-gain and small-size amplifier. The fabricated MMIC cascode HBT amplifier with 1.2mm/spl times/1.3mm size shows a gain of 20dB in the 60GHz-band.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

自引率

0.00%

发文量