High-temperature turn-off performance of IGBTs in resonant converters

This paper reports on the experimental and theoretical performances of insulated gate bipolar transistor (IGBT) turn-off characteristics when used in resonant converters operated at higher ambient temperatures. Temperature- and dv/dt-dependent elevated tail current bump was measured that is caused by the minority carrier storage and recombination in the drift region of the device. The measured data is shown to be in excellent agreement with the simulated results over the entire range of temperature. The simulations were performed using an advanced mixed device and circuit simulator in which device carrier dynamics was studied under boundary conditions imposed by circuit operation.<>