介孔硅模板中一维CuInSe2纳米结构的电沉积及表征

S. de la Luz-Merino, M. E. Calixto, A. Méndez-Blas, B. Mari-Soucase
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引用次数: 5

摘要

本文研究了在多孔硅(PSi)模板辅助下形成的一维CuInSe2 (CIS)纳米结构的电沉积和表征。发现CIS的形成取决于所使用的特定底物。利用电沉积过程中的电流瞬态响应直接研究了PSi模板的孔隙填充过程,并与FESEM图像进行了比较。利用FE-SEM、FIB、XRD、拉曼光谱等对CIS纳米结构进行了全面表征,了解了其物理性质。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrodeposition and characterization of one-dimensional CuInSe2 nanostructures in mesoporous silicon templates
Abstract In this work, the electrodeposition and characterization of 1D CuInSe2 (CIS) nanostructures formed by the assistance of porous silicon (PSi) templates is presented. The formation of CIS was found to be potential dependent on the specific substrate being used. The filling process of the pores of PSi template was studied directly by the current transient response during electrodeposition of nanostructured CIS and results were compared with FESEM images. CIS nanostructures were fully characterized by using FE-SEM, FIB, XRD, and Raman spectroscopy, in order to know their physical properties.
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