所有自由载流子注入条件下的绝缘栅双极晶体管的解析模型

Y. Yue, J. Liou, I. Batarseh
{"title":"所有自由载流子注入条件下的绝缘栅双极晶体管的解析模型","authors":"Y. Yue, J. Liou, I. Batarseh","doi":"10.1109/SECON.1996.510106","DOIUrl":null,"url":null,"abstract":"The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device. The model is derived rigorously from the ambipolar transport equation and is valid for all free-carrier injection conditions, rather than just for a special case (i.e., low or high free-carrier injection) considered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional device simulator called MEDICI are also included in support of the model.","PeriodicalId":338029,"journal":{"name":"Proceedings of SOUTHEASTCON '96","volume":"240 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An analytical model for the insulated-gate bipolar transistor under all free-carrier injection conditions\",\"authors\":\"Y. Yue, J. Liou, I. Batarseh\",\"doi\":\"10.1109/SECON.1996.510106\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device. The model is derived rigorously from the ambipolar transport equation and is valid for all free-carrier injection conditions, rather than just for a special case (i.e., low or high free-carrier injection) considered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional device simulator called MEDICI are also included in support of the model.\",\"PeriodicalId\":338029,\"journal\":{\"name\":\"Proceedings of SOUTHEASTCON '96\",\"volume\":\"240 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of SOUTHEASTCON '96\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SECON.1996.510106\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of SOUTHEASTCON '96","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.1996.510106","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

绝缘栅双极晶体管(IGBT)是目前最先进、最有发展前途的功率开关器件。本文提出了这种器件的电流-电压特性的解析模型。该模型严格推导自双极性输运方程,适用于所有自由载流子注入条件,而不仅仅适用于迄今为止文献中报道的IGBT模型中考虑的特殊情况(即低或高自由载流子注入)。在一个叫做MEDICI的二维设备模拟器上模拟的结果也包括在支持模型中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An analytical model for the insulated-gate bipolar transistor under all free-carrier injection conditions
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device. The model is derived rigorously from the ambipolar transport equation and is valid for all free-carrier injection conditions, rather than just for a special case (i.e., low or high free-carrier injection) considered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional device simulator called MEDICI are also included in support of the model.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信