hemt的引流屏障降低

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722638

R. Anholt

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引用次数: 1

摘要

漏极阻挡降低会产生a/ spl γ /Vds变化的针断电压，从而影响输出电导。因子/spl γ /取决于通道宽高比X=/spl pi/L/4d，其中L是有效栅极长度，d是有效通道深度。对于低输出电导，我们需要最小化/spl gamma/和最大化通道宽高比x。本文使用2D模拟来描绘有效的L和d参数，并说明可以对层设计做些什么来最小化d。

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Drain barrier lowering in HEMTs

Drain barrier lowering gives pinchoff voltages that vary as /spl gamma/Vds, which affects the output conductances. The factor /spl gamma/ depends on the channel aspect ratio X=/spl pi/L/4d, where L is the effective gate length and d is the effective channel depth. For low output conductances we need to minimize /spl gamma/ and maximize the channel aspect ratio X. This paper uses 2D simulations to delineate the effective L and d parameters, and illustrates what can be done to the layer design to minimize d.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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