H. Chau, D. Pavlidis, G. Ng, K. Tomizawa, D. M. Baker, C. Meaton, J. N. Tothill
{"title":"采用新颖的p/sup -/-n/sup -/集电极结构改善了InP/InGaAs单异质结双极晶体管的击穿速度权衡","authors":"H. Chau, D. Pavlidis, G. Ng, K. Tomizawa, D. M. Baker, C. Meaton, J. N. Tothill","doi":"10.1109/ICIPRM.1993.380719","DOIUrl":null,"url":null,"abstract":"A novel p/sup -/-n/sup -/ collector design is presented for InP/InGaAs heterostructure bipolar transistors (HBTs). It shows a speed advantage over conventional n/sup -/ collector designs without at the same time being handicapped in terms of breakdown voltage as would normally be the case of traditional special collector designs. The speed and breakdown-speed tradeoff superiority of the p/sup -/-n/sup -/ HBT over the conventional designs are shown and discussed theoretically and experimentally.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved breakdown-speed tradeoff of InP/InGaAs single heterojunction bipolar transistor using a novel p/sup -/-n/sup -/ collector structure\",\"authors\":\"H. Chau, D. Pavlidis, G. Ng, K. Tomizawa, D. M. Baker, C. Meaton, J. N. Tothill\",\"doi\":\"10.1109/ICIPRM.1993.380719\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel p/sup -/-n/sup -/ collector design is presented for InP/InGaAs heterostructure bipolar transistors (HBTs). It shows a speed advantage over conventional n/sup -/ collector designs without at the same time being handicapped in terms of breakdown voltage as would normally be the case of traditional special collector designs. The speed and breakdown-speed tradeoff superiority of the p/sup -/-n/sup -/ HBT over the conventional designs are shown and discussed theoretically and experimentally.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380719\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380719","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improved breakdown-speed tradeoff of InP/InGaAs single heterojunction bipolar transistor using a novel p/sup -/-n/sup -/ collector structure
A novel p/sup -/-n/sup -/ collector design is presented for InP/InGaAs heterostructure bipolar transistors (HBTs). It shows a speed advantage over conventional n/sup -/ collector designs without at the same time being handicapped in terms of breakdown voltage as would normally be the case of traditional special collector designs. The speed and breakdown-speed tradeoff superiority of the p/sup -/-n/sup -/ HBT over the conventional designs are shown and discussed theoretically and experimentally.<>
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