V. Ciupină, C. Lungu, E. Vasile, G. Prodan, C. Porosnicu, R. Vlǎdoiu, A. Mandeş, V. Dinca, V. Nicolescu, M. Prodan, R. Manu
{"title":"热离子真空电弧法制备钛碳多层纳米结构","authors":"V. Ciupină, C. Lungu, E. Vasile, G. Prodan, C. Porosnicu, R. Vlǎdoiu, A. Mandeş, V. Dinca, V. Nicolescu, M. Prodan, R. Manu","doi":"10.1063/1.5135433","DOIUrl":null,"url":null,"abstract":"Titanium-Carbon (Ti-C) multilayer nanostructures were deposed by Thermionic Vacuum Arc (TVA) technology. The layers consisting of about 100 nm Carbon base layer and seven 40 nm alternatively Ti and C layers were deposed on Silicon substrates. The thickness of such a multilayer structure was up to 500 nm. On the other hand, in order to obtain Ti-C multilayer structures with various Ti content, a 20nm thick C layer was first deposed on Si substrate and then seven successively Ti-C layers (Ti and C simultaneously deposed), each of these having a thickness of up to 40 nm were deposed. To perform the successively Ti-C layers with various Ti content were changed the discharge parameters for C and Ti plasma sources to obtain the desirable Ti atomic concentration To characterize microstructure properties of as prepared C-Ti multilayer structures were used Rutherford Backscattering Spectrometry (RBS), Electron microscopy techniques (TEM, STEM), Raman Spectroscopy and electrical measurements.Titanium-Carbon (Ti-C) multilayer nanostructures were deposed by Thermionic Vacuum Arc (TVA) technology. The layers consisting of about 100 nm Carbon base layer and seven 40 nm alternatively Ti and C layers were deposed on Silicon substrates. The thickness of such a multilayer structure was up to 500 nm. On the other hand, in order to obtain Ti-C multilayer structures with various Ti content, a 20nm thick C layer was first deposed on Si substrate and then seven successively Ti-C layers (Ti and C simultaneously deposed), each of these having a thickness of up to 40 nm were deposed. To perform the successively Ti-C layers with various Ti content were changed the discharge parameters for C and Ti plasma sources to obtain the desirable Ti atomic concentration To characterize microstructure properties of as prepared C-Ti multilayer structures were used Rutherford Backscattering Spectrometry (RBS), Electron microscopy techniques (TEM, STEM), Raman Spectroscopy and electrical measurements.","PeriodicalId":233679,"journal":{"name":"TURKISH PHYSICAL SOCIETY 35TH INTERNATIONAL PHYSICS CONGRESS (TPS35)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Titanium - carbon multilayer nanostructures obtained by thermionic vacuum arc method\",\"authors\":\"V. Ciupină, C. Lungu, E. Vasile, G. Prodan, C. Porosnicu, R. Vlǎdoiu, A. Mandeş, V. Dinca, V. Nicolescu, M. Prodan, R. Manu\",\"doi\":\"10.1063/1.5135433\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Titanium-Carbon (Ti-C) multilayer nanostructures were deposed by Thermionic Vacuum Arc (TVA) technology. The layers consisting of about 100 nm Carbon base layer and seven 40 nm alternatively Ti and C layers were deposed on Silicon substrates. The thickness of such a multilayer structure was up to 500 nm. On the other hand, in order to obtain Ti-C multilayer structures with various Ti content, a 20nm thick C layer was first deposed on Si substrate and then seven successively Ti-C layers (Ti and C simultaneously deposed), each of these having a thickness of up to 40 nm were deposed. To perform the successively Ti-C layers with various Ti content were changed the discharge parameters for C and Ti plasma sources to obtain the desirable Ti atomic concentration To characterize microstructure properties of as prepared C-Ti multilayer structures were used Rutherford Backscattering Spectrometry (RBS), Electron microscopy techniques (TEM, STEM), Raman Spectroscopy and electrical measurements.Titanium-Carbon (Ti-C) multilayer nanostructures were deposed by Thermionic Vacuum Arc (TVA) technology. The layers consisting of about 100 nm Carbon base layer and seven 40 nm alternatively Ti and C layers were deposed on Silicon substrates. The thickness of such a multilayer structure was up to 500 nm. On the other hand, in order to obtain Ti-C multilayer structures with various Ti content, a 20nm thick C layer was first deposed on Si substrate and then seven successively Ti-C layers (Ti and C simultaneously deposed), each of these having a thickness of up to 40 nm were deposed. To perform the successively Ti-C layers with various Ti content were changed the discharge parameters for C and Ti plasma sources to obtain the desirable Ti atomic concentration To characterize microstructure properties of as prepared C-Ti multilayer structures were used Rutherford Backscattering Spectrometry (RBS), Electron microscopy techniques (TEM, STEM), Raman Spectroscopy and electrical measurements.\",\"PeriodicalId\":233679,\"journal\":{\"name\":\"TURKISH PHYSICAL SOCIETY 35TH INTERNATIONAL PHYSICS CONGRESS (TPS35)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"TURKISH PHYSICAL SOCIETY 35TH INTERNATIONAL PHYSICS CONGRESS (TPS35)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.5135433\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"TURKISH PHYSICAL SOCIETY 35TH INTERNATIONAL PHYSICS CONGRESS (TPS35)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.5135433","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Titanium-Carbon (Ti-C) multilayer nanostructures were deposed by Thermionic Vacuum Arc (TVA) technology. The layers consisting of about 100 nm Carbon base layer and seven 40 nm alternatively Ti and C layers were deposed on Silicon substrates. The thickness of such a multilayer structure was up to 500 nm. On the other hand, in order to obtain Ti-C multilayer structures with various Ti content, a 20nm thick C layer was first deposed on Si substrate and then seven successively Ti-C layers (Ti and C simultaneously deposed), each of these having a thickness of up to 40 nm were deposed. To perform the successively Ti-C layers with various Ti content were changed the discharge parameters for C and Ti plasma sources to obtain the desirable Ti atomic concentration To characterize microstructure properties of as prepared C-Ti multilayer structures were used Rutherford Backscattering Spectrometry (RBS), Electron microscopy techniques (TEM, STEM), Raman Spectroscopy and electrical measurements.Titanium-Carbon (Ti-C) multilayer nanostructures were deposed by Thermionic Vacuum Arc (TVA) technology. The layers consisting of about 100 nm Carbon base layer and seven 40 nm alternatively Ti and C layers were deposed on Silicon substrates. The thickness of such a multilayer structure was up to 500 nm. On the other hand, in order to obtain Ti-C multilayer structures with various Ti content, a 20nm thick C layer was first deposed on Si substrate and then seven successively Ti-C layers (Ti and C simultaneously deposed), each of these having a thickness of up to 40 nm were deposed. To perform the successively Ti-C layers with various Ti content were changed the discharge parameters for C and Ti plasma sources to obtain the desirable Ti atomic concentration To characterize microstructure properties of as prepared C-Ti multilayer structures were used Rutherford Backscattering Spectrometry (RBS), Electron microscopy techniques (TEM, STEM), Raman Spectroscopy and electrical measurements.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
